The research team led by Assistant Professor Yen-Lin Huang from the Department of Materials Science and Engineering has successfully overcome key material limitations in spin-orbit torque magnetic random-access memory (SOT-MRAM). If this high-speed, low-power memory technology can be successfully commercialized, it is expected to benefit the development of large language models (LLMs) and AI computing, as well as mobile devices (by extending battery life and enhancing data security) and automotive electronics and data centers (by improving reliability and reducing energy consumption). This achievement has been published in Nature Electronics, showcasing Taiwan’s innovative capabilities in next-generation memory technologies.
Related reports:
1. National Science and Technology Council (NSTC) https://www.nstc.gov.
2. PanSci: https://www.youtube.com/
3. CNA: https://www.cna.com.
4. Commercial Times: https://www.ctee.com.tw/
5. TechNews: https://technews.tw/
6. eeTaiwan: https://www.
1. National Science and Technology Council (NSTC) https://www.nstc.gov.
2. PanSci: https://www.youtube.com/
3. CNA: https://www.cna.com.
4. Commercial Times: https://www.ctee.com.tw/
5. TechNews: https://technews.tw/
6. eeTaiwan: https://www.
