People/本所成員
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職稱
助理教授
聯絡方式
e-mail:ycl194@nycu.edu.tw
辦公室電話:
辦公室:EF311
實驗室分機:
實驗室網站
https://yuchuanlin.weebly.com/
學歷- 美國賓夕法尼亞州立大學博士 材料科學與工程學系 2017
- 國立台灣大學碩士 物理學系 2011
- 國立成功大學學士 物理學系 2009
經歷- 國立陽明交通大學 材料科學與工程系 助理教授 (2023/3 –now)
- 美國賓夕法尼亞州立大學 助理研究教授 (2021/4 –2023/3)
- 美國賓夕法尼亞州立大學 博士後研究 (2020/6 – 2021/3)
- 美國能源局橡樹嶺國家實驗室 (CNMS at ORNL) 博士後研究 (2017/11 – 2020/5)
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- Outstanding ORNL Scholarly Output Award, Oak Ridge National Laboratory (2020)
- CNMS User Poster Award, Oak Ridge National Laboratory (2019)
- Outstanding Ph.D. Research, Springer Nature (2018)
- MRS Graduate Student Award (Silver Medal), Materials Research Society (2016)
學術研究領域- 2D materials and nanomaterials
- Thin film deposition
- Metal-organic chemical vapor deposition
- Epitaxy
- Doping and ion implantation
- Semiconductor characterization and devices
- Physics and Chemistry
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Janus Monolayers for Ultrafast and Directional Charge Transfer in Transition Metal Dichalcogenide Heterostructures
T. Cheng, Y.-C. Lin†, N. Rafizadeh, D. B. Geohegan, Z. Ni†, K. Xiao, H. Zhao†, “Janus Monolayers for Ultrafast and Directional Charge Transfer in Transition Metal Dichalcogenide Heterostructures” ACS Nano (2022), 16, 4197-4205 († Corresponding author)
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Realization of electronic-grade two-dimensional transition metal dichalcogenide by thin-film deposition techniques
Y.-C. Lin, R. Torsi, N. A. Simonson, A. Kozhakhmetov, J. A. Robinson, “Realization of electronic-grade two-dimensional transition metal dichalcogenide by thin-film deposition techniques” Defect in Two-Dimensional Materials, edited by R. Addou and L. Colombo, Materials Today (2022), 159-193, DOI: doi.org/10.1016/B978-0-12-820292-0.00012-4
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Nonequilibrium synthesis and processing approaches to tailor heterogeneity in 2D materials
D. B. Geohegan, K. Xiao, A. A. Puretzsky, Y.-C. Lin, Y. Yu, C. Liu, “Nonequilibrium synthesis and processing approaches to tailor heterogeneity in 2D materials” Defect in Two-Dimensional Materials, edited by R. Addou and L. Colombo, Materials Today (2022), 221-258, DOI: doi.org/10.1016/B978-0-12-820292-0.00014-8
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Understanding Substrate-Guided Assembly in van der Waals Epitaxy by in Situ Laser Crystallization within a Transmission Electron Microscope
C. Liu*, Y.-C. Lin*, M. Yoon, C. M. Rouleau, M. F. Chisholm, K. Xiao, G. Eres, G. Duscher, D. B. Geohegan, “Understanding Substrate-Guided Assembly in van der Waals Epitaxy by in Situ Laser Crystallization within a Transmission Electron Microscope” ACS Nano (2021), 15, 8638-8652 (* Co-first author)
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Strain-Induced Growth of Twisted Bilayers during the Coalescence of Monolayer MoS2 Crystals
Y. Yu, G. S. Jung, C. Liu, Y.-C. Lin, C. M. Rouleau, M. Yoon, G. Eres, G. Duscher, K. Xiao, S. Irle, A. A. Puretzky, D. B. Geohegan, “Strain-Induced Growth of Twisted Bilayers during the Coalescence of Monolayer MoS2 Crystals” ACS Nano (2021), 15, 4504-4517
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Controllable Doping and Alloying Transition Metal Dichalcogenide Monolayers
Y.-C. Lin, R. Torsi, D. B. Geohegan, J. A. Robinson, K. Xiao, “Controllable Doping and Alloying Transition Metal Dichalcogenide Monolayers” Advanced Science (2021), 8, 2004249
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Intrinsic Defects in MoS2 Grown by Pulsed Laser Deposition: From Monolayers to Bilayers
F. Bertoldo, R. R. Unocic, Y.-C. Lin, X. Sang, A. A. Puretzky, Y. Yu, D. Miakota, C. M. Rouleau, J. Schou, K. S. Thygesen, D. B. Geohegan, S. Canulescu, “Intrinsic Defects in MoS2 Grown by Pulsed Laser Deposition: From Monolayers to Bilayers” ACS Nano (2021), 15, 2858-2868
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Excitonic Dynamic in Janus MoSSe and WSSe Monolayers
T. Cheng, Y.-C. Lin†, Y. Yu, P. Valencia-Acuna, A. A. Puretzky, C. Liu, I. N. Ivanov, G. Duscher, D. B. Geohegan, Z. Ni†, H. Zhao† “Excitonic Dynamic in Janus MoSSe and WSSe Monolayers” Nano Letters (2021), 21, 931-937 († Corresponding author)
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Acquisition and analysis of scanning tunneling spectroscopy data—WSe2 monolayer
R. M. Feenstra, G. R. Frazier, Y. Pan, S. Fölsch, Y.-C. Lin, B. Jariwala, K. Zhang, “Acquisition and analysis of scanning tunneling spectroscopy data—WSe2 monolayer” Journal of Vacuum Science and Technology A (2020), 39, 011001
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Non-Equilibrium Synthesis of Highly Active Nanostructured, Oxygen-Incorporated Amorphous Molybdenum Sulfide HER Electrocatalyst
G. Giuffredi, A. Mezzetti, A. Perego, P. Mazzolini, M. Prato, F. Fumagalli, Y.-C. Lin, C. Liu, I. N. Ivanov, A. Belianinov, M. Colombo, G. Divitini, C. Ducati, G. Duscher, A. A. Puretzky, D. B. Geohegan, and F. Di Fonzo, “Non-Equilibrium Synthesis of Highly Active Nanostructured, Oxygen-Incorporated Amorphous Molybdenum Sulfide HER Electrocatalyst” Small (2020), 16, 2004047
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Heterogeneities at multiple length scales in 2D layered materials: From localized defects and dopants to mesoscopic heterostructures
H. Cai, Y. Yu, Y.-C. Lin, A. A. Puretzky, D. B. Geohegan, K. Xiao, “Heterogeneities at multiple length scales in 2D layered materials: From localized defects and dopants to mesoscopic heterostructures” Nano Research (2020), 14, 1625-1249
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Modification of the electronic transport in atomically thin WSe2 by oxidation
Y.-C. Lin, B. M. Bersch, R. Addou, Q. Wang, K. Xu, C. M. Smyth, B. Jariwala, J. Liang, M. J. Kim, S. K. Fullerton-Shirey, R. M. Wallace, J. A. Robinson, “Modification of the electronic transport in atomically thin WSe2 by oxidation” Advanced Materials Interfaces (2020), 7, 2000422
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Mechanical deformation effects on the electronic structures of Moiré superlattices in MoS2-WSe2 bilayers
D. Waters, Y. Nie, F. Lüpke, Y. Pan, S. Fölsch, Y.-C. Lin, B. Jariwala, K. Zhang, K. Cho, J. A. Robinson, R. M. Feenstra, “Mechanical deformation effects on the electronic structures of Moiré superlattices in MoS2-WSe2 bilayers” ACS Nano (2020), 14, 7564-7573
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Low-energy implantation into transition metal dichalcogenides for Janus structures
Y.-C. Lin, C. Liu, Y. Yu, E. Zarkadoula, M. Yoon, A. A. Puretzky, L. Liang, Y. Gu, A. M. Strasser, G. Duscher, M. F. Chisholm, I. Ivanov, C. Rouleau, H. Meyer III, K. Xiao, D. B. Geohegan, “Low-energy implantation into transition metal dichalcogenides for Janus structures” ACS Nano (2020), 14, 3896-3906
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Two-dimensional palladium diselenide with strong in-plan anisotropy and high mobility grown by chemical vapor deposition
Y. Gu, H. Cai, J. Dong, Y. Yu, A. N. Hoffman, C. Liu, A. Oyedele, Y.-C. Lin, G. Ge, A. A. Puretzky, G. Duscher, M. F. Chisholm, P. D. Rack, C. M. Rouleau, Z. Gai, X. Meng, F. Ding, D. B. Geohegan, K. Xiao, “Two-dimensional palladium diselenide with strong in-plan anisotropy and high mobility grown by chemical vapor deposition” Advanced Materials (2020), 32, 2070152
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In Situ laser reflectivity to monitor and control the pulsed laser deposition of atomically-thin 2D Materials
A. A. Puretzky, Y.-C. Lin, C. Liu, A. M. Strasser, Y. Yu, S. Canulescu, C. M. Rouleau, K. Xiao, G. Duscher, and D. B. Geohegan, “In Situ laser reflectivity to monitor and control the pulsed laser deposition of atomically-thin 2D Materials” 2D Materials (2020), 7, 025048
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Synthesis and emerging properties of 2D layered III-VI Metal Chalcogenides
H. Cai, Y. Gu, Y.-C. Lin, Y. Yu, D. B. Geohegan, K. Xiao, “Synthesis and emerging properties of 2D layered III-VI Metal Chalcogenides” Applied Physics Reviews (2019), 6, 041312
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Lithographically patterned metallic conduction in single-layer MoS2 via plasma processing
M. S. Stanford, Y.-C. Lin, M. G. Sales, A. N. Hoffman, C. T. Nelson, K. Xiao, S. McDonnell, P. D. Rack, “Lithographically patterned metallic conduction in single-layer MoS2 via plasma processing” npj 2D Materials and Applications (2019), 3, 13
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Facile 1D graphene fiber synthesis from an agricultural by-product: A silicon-mediated graphitization route
K. Fujisawa, Y. Lei, C. de Tomas, I. Suarez-Martinez, C. Zhou, Y.-C. Lin, S. Subramanian, A. L. Elías, M. Fujishige, K. Takeuchi, J. A. Robinson, N. A. Marks, M. Endo, M. Terrones, “Facile 1D graphene fiber synthesis from an agricultural by-product: A silicon-mediated graphitization route” Carbon (2019), 142, 78-88
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WSe2 homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates
Y. Pan, S. Fölsch, Y.-C. Lin, B. Jariwala, K. Cho, J. A. Robinson, Y. Nie, K. Cho, R. M. Feenstra, “WSe2 homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates” 2D Materials (2019), 6, 021001
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Impact of post-lithography polymer residue on the electrical characteristics of MoS2 and WSe2 field effect transistors
J. Liang, K. Xu, B. Toncini, B. M. Bersch, B. Jariwala, Y.‐C. Lin, J. A. Robinson, S. K Fullerton-Shirey, “Impact of post-lithography polymer residue on the electrical characteristics of MoS2 and WSe2 field effect transistors,” Advanced Materials Interfaces (2019), 6, 18011321
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Properties of synthetic two-dimensional materials and heterostructures
Y.-C. Lin, “Properties of synthetic two-dimensional materials and heterostructures” Springer Nature (2018), ISBN 978-3-030-00332-6
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One dimensional metallic edge in atomically thin WSe2 induced by air exposure
R. Addou, C. M. Smyth, J.-Y. Noh, Y.-C. Lin, Y. Pan, S. M. Eichfeld, S. Fölsch, J. A. Robinson, K. Cho, R. M. Feenstra, R. M. Wallace, “One dimensional metallic edge in atomically thin WSe2 induced by air exposure” 2D Materials (2018), 5, 025017
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Quantum-confined electronic states arising from Moiré pattern of MoS2-WSe2 heterolayers
Y. Pan, S. Fölsch, Y. Nie, D. Waters, Y.-C. Lin, B. Jariwala, K. Zhang, K. Cho, J. A. Robinson, R. M. Feenstra, “Quantum-confined electronic states arising from Moiré pattern of MoS2-WSe2 heterolayers” Nano Letters (2018), 18, 1849-1855
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Realizing Large-area, Electronic-grade Two-dimensional Semiconductors
Y.-C. Lin*, B. Jariwala*, B. M. Bersch, K. Xu, Y. Nie, B. Wang, S. M. Eichfeld, X. Zhang, T. Choudhury, Y. Pan, R. Addou, C. M. Smyth, J. Li, K. Zhang, A. Haque, S. Fölsch, R. M. Feentra, R. M. Wallace, K. Cho, S. K. Fullerton-Shirey, J. M. Redwing, and J. A. Robinson, “Realizing Large-area, Electronic-grade Two-dimensional Semiconductors” ACS Nano (2018), 18, 965-975 (* Co-first author)
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Electric double layer dynamics in polyethylene oxide LiClO4 on graphene transistors
H.-M. Li, B. Bourdon, L. Hao, Y.-C. Lin, J. A. Robinson, A. Seabaugh, S. K. Fullerton-Shirey, “Electric double layer dynamics in polyethylene oxide LiClO4 on graphene transistors” The Journal of Physical Chemistry C (2017), 121, 12996-17004
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Increasing the electrical double layer retention time of graphene field-effect transistors using polyvinyl alcohol and LiClO4
E. W. Kinder, A. Fuller, Y.-C. Lin, J. A. Robinson, S. K. Fullerton-Shirey, “Increasing the electrical double layer retention time of graphene field-effect transistors using polyvinyl alcohol and LiClO4” ACS Applied Materials and Interfaces (2017), 9, 25006-25013
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Magnetic brightening of dark excitons in monolayer WSe2
X.-X. Zhang, Z. Liu, T. Cao, Y.-C. Lin, F. Zhang, Y. Wang, Z. Li, J. Hone, J. A. Robinson, S. G. Louie, D. Smirnov, T. F. Heinz, “Magnetic brightening of dark excitons in monolayer WSe2” Nature Nanotechnology (2017), 12, 883-888
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Selective area growth and controlled substrate coupling of transition metal dichalcogenides
B. M. Bersch*, S. M. Eichfeld*, Y.-C. Lin*, K. Zhang, G. R. Bhimanapati, A. F. Piasecki, M. Labella III, J. A. Robinson, “Selective area growth and controlled substrate coupling of transition metal dichalcogenides” 2D Materials (2017), 4, 025083 (* Co-first author)
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Two-dimensional gallium nitride realized by graphene encapsulation
Z. Y. Al Balushi, K. Wang, R. M. Ghosh, R. A. Vilá, S. M. Eichfeld, J. D. Caldwell, X. Qin, Y.-C. Lin, P. A. DeSario, S. Subramanian, D. F. Paul, R. M. Wallace, S. Datta, J. M. Redwing, J. A. Robinson, “Two-dimensional gallium nitride realized by graphene encapsulation” Nature Materials (2016), 15, 1166-1171
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Photoluminescence of monolayer transition metal dichalcogenides integrated with VO2
Y.-C. Lin, K. S. DeLello, H.-T. Zhang, K. Zhang, J. A. Robinson, “Photoluminescence of monolayer transition metal dichalcogenides integrated with VO2” Journal of Physics and Condensed Matters (2016), 28, 50
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Excitonic effects in tungsten disulphide Monolayers on two-layer graphene
C. E. Giusca, I. Rungger, V. Panchal, C Melios, Y.-C. Lin, E. Kahn, A. L. Elias, J. A. Robinson, M. Terrones, “Excitonic effects in tungsten disulphide Monolayers on two-layer graphene” ACS Nano (2016), 10, 7840-7846
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Realizing 2D Materials Via MOCVD
N. Briggs, S. Subramanian, Y.-C. Lin, S. M. Eichfeld, B. Jariwala, G. R. Bhimanapati, K. Zhang, J. Robinson. “Realizing 2D Materials Via MOCVD” ECS Transactions (2016), 75, 8
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Synthesis, Properties, and Stacking of Two-dimensional Transition Metal Dichalcogenides
K. Zhang, Y.-C. Lin, J. A. Robinson, “Synthesis, Properties, and Stacking of Two-dimensional Transition Metal Dichalcogenides” Semiconductors and Semimetals (2016), 95, 189-219
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Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures
Y.-C. Lin, J. Li, S. C. de la Barrera, S. M. Eichfeld, Y. Nie, R. Addou, P. C. Mende, R. M. Wallace, K. Cho, R. M. Feenstra, J. A. Robinson, “Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures” Nanoscale (2016), 8, 8947
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Band alignment at MoS2/BN/Al2O3 interfaces
J. G. Distefano, Y.-C. Lin, J. Robinson, N. R. Glavin, A. A. Voevodin, J. Brockman, M. Kuhn, B French, S. W. King, “Band alignment at MoS2/BN/Al2O3 interfaces” Journal of Electronic Materials (2016), 45, 983-988
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Thickness characterization of atomically-thin WSe2 on epitaxial graphene by low-energy electron reflectivity oscillations
S. C. de la Barrera, Y.-C. Lin, S. M. Eichfeld, J. A. Robinson, R. M. Feenstra, “Thickness characterization of atomically-thin WSe2 on epitaxial graphene by low-energy electron reflectivity oscillations” Journal of Vacuum Science and Technology B (2016), 34, 04J106
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Heterojunction resonant tunneling diode at the atomic limit
R. K. Ghosh, Y.-C. Lin, J. A. Robinson, S. Datta, “Heterojunction resonant tunneling diode at the atomic limit” IEEE International SISPAD (2015), 266-269
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Atomically thin resonant tunneling diodes built from synthetic van der Waals heterostructures
Y.-C. Lin, R. K. Ghosh, R. Addou, N. Lu, S. M. Eichfeld, H. Zhu, M.-Y. Li, X. Peng, M. J. Kim, L.-J. Li, R. M. Wallace, S. Datta, J. A. Robinson, “Atomically thin resonant tunneling diodes built from synthetic van der Waals heterostructures” Nature Communications (2015), 6, 7311
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Two-dimensional materials for low power and high frequency devices
B. M. Bersch, Y.-C. Lin, K. Zhang, S. M. Eichfeld, J. H. Leach, R. Metzger, K. Evans, J. A. Robinson, “Two-dimensional materials for low power and high frequency devices” Proceedings of SPIE (2015), 9467
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Synthesis of two-dimensional materials for beyond graphene devices
K. Zhang, S. M. Eichfeld, J. H. Leach, B. Metzger, Y.-C. Lin, K. Evans, J. A. Robinson, “Synthesis of two-dimensional materials for beyond graphene devices” Proceedings of SPIE (2015) 9467, 94670O, 846207
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The impact of graphene properties on GaN/AlN nucleation
Z. Y. Al Balushi, T. Miyagi, Y.-C. Lin, K. Wang, L. Calderin, G. Bhimanapati, J. M. Redwing, J. A. Robinson, “The impact of graphene properties on GaN/AlN nucleation” Surface Science (2015), 634, 81-88
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Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition
S. M. Eichfeld, L. Hossain, Y.-C. Lin, A. F. Piasecki, B. Kupp, A. G. Birdwell, R. A. Burke, N. Lu, X. Peng, J. Li, A. Azcatl, S. McDonnell, R. M. Wallace, M. J. Kim, T.S. Mayer, J. M. Redwing, J. A. Robinson, “Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition” ACS Nano (2015), 9, 2080-2087
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Large-area synthesis of WSe2 from WO3 by selenium-oxygen ion exchange
P. N. Browning, S. M. Eichfeld, K. Zhang, L. Hossain, Y.-C. Lin, K. Wang, N. Lu, A. R. Waite, A. A. Voevodin, M. Kim, J. A. Robinson, “Large-area synthesis of WSe2 from WO3 by selenium-oxygen ion exchange” 2D Materials (2015), 2, 014003
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Atomically thin heterostructures based on single-layer tungsten diselenide and graphene
Y.-C. Lin, C.-Y. S. Chang, R. K. Ghosh, J. Li, H. Zhu, R. Addou, B. Diaconescu, T. Ohta, X. Peng, M. J. Kim, J. T. Robinson, R. M. Wallace, T. S. Mayer, S. Datta, L.-J. Li, J. A. Robinson, “Atomically thin heterostructures based on single-layer tungsten diselenide and graphene” Nano Letters (2014), 14, 6936-6941
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Rapid, non-destructive evaluation of ultrathin WSe2 using spectroscopic ellipsometry
S. M. Eichfeld, C.M. Eichfeld, Y.-C. Lin, L. Hossain, J. A. Robinson, “Rapid, non-destructive evaluation of ultrathin WSe2 using spectroscopic ellipsometry” APL Materials (2015), 2, 092508
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Direct synthesis of van der Waals solids
Y.-C. Lin, N. Lu, N. Perea-Lopez, J. Li, Z. Lin, C. H. Lee, C. Sun, L. Calderin, P. N. Browning, M. S. Bresnehan, M. J. Kim, T. S. Mayer, M. Terrones, J. A. Robinson, “Direct synthesis of van der Waals solids” ACS Nano (2014), 8, 3715-3723
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On the coexistence of localization and semiclassical transport in the low-field quantum Hall effect
K.-Y. Chen, C.-T. Liang, D.-R. Hang, L.-H. Lin, C.-F. Huang, Y.-H. Chang, C.-Y. Huang, J.-C. Chen, C.-C. Tang, S.-F. Chen, Y.-C. Lin, C.-H. Liu, K. A. Cheng, “On the coexistence of localization and semiclassical transport in the low-field quantum Hall effect” Physical E (2012), 44, 1558-1561
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Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates
K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates” Nano Letters (2012), 12, 1538-1544
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Wafer-scale MoS2 thin layer prepared by MoO3 sulfurization
Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, L.-J. Li, “Wafer-scale MoS2 thin layer prepared by MoO3 sulfurization” Nanoscale (2012), 4, 6637-6641
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Efficient reduction of graphene oxide catalyzed by copper
Y.-C. Lin, K.-K. Liu, C.-Y. Wu, C.-W. Chu, J. C.-W. Wang, C.-T. Liang, L.-J. Li, “Efficient reduction of graphene oxide catalyzed by copper” Physical Chemistry Chemical Physics (2012), 14, 3083-3088
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Janus Monolayers for Ultrafast and Directional Charge Transfer in Transition Metal Dichalcogenide Heterostructures