張翼-國立陽明交通大學材料科學與工程學系所

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張翼

成員介紹學術研究學術著作

職稱
終身講座教授

聯絡方式
辦公室電話：03-5712121-31536/31421
傳真：03-5724727
辦公室：電資中心
e-mail：edc@nycu.edu.tw
實驗室分機：03-5712121-55379
秘書陳小姐，辦公室:電資518，秘書分機59425

實驗室網站
https://csdlab.web.nycu.edu.tw/

學歷
- 美國明尼蘇達大學材料科學與工程博士 1979年08月 ~ 1985年12月
- 國立台灣清華大學材料科學與工程學系學士 1973年09月 ~ 1977年06月
經歷
- 國立交通大學研發長2011年2月 ~ 2016年
- 交大-台積電聯合發中心主任 2013年5月 ~ 迄今
- 國立交通大學材料科學與工程學系主任 2004年2月 ~ 2008年2月
- 國立交通大學國際化事務辦公室執行長 2002年6月 ~ 2004年1月
- 國立交通大學材料所/電子所合聘教授 2008年2月 ~ 迄今
- 漢威光電公司總經理 1997年12 ~ 1999年1月
- 美國Comsat Labs Senior MTS/ Microelectronics Division 1988年5月 ~ 1990年1月
- 美國Unisys Corp/ GaAs Component Division 1985年12月 ~ 1988年5月
榮譽事蹟
- 美國電機電子工程師學會會士2014。
- 榮獲經濟部頒發大學產業經濟貢獻獎 -產業深耕獎」、與第一屆國家產業創新獎 -「產業創新學術獎」。
- 102年度中國材料科學學會會士。
- 榮獲國科會 97 年度、101 年度及104 年度「傑出研究獎」、及100 年度「傑出技術轉移貢獻獎」。榮獲 97 年度中國電機工程學會「傑出電機工程教授獎」。
資料更新負責人：林彥谷
研究領域
- III-V族高速高頻電子元件與製程技術
- GaN功率元件技術
- III-V族材料磊晶技術
- III-V族(GaN, GaAs, InAs)/矽晶元件整合技術
- 高頻覆晶構裝技術
- 功率元件構裝技術
建教合作領域
- GaN及GaAs異質介面磊晶成長技術
- 高功率GaN及高頻率GaN元件及製程技術
- GaAs及InAs高頻率元件及製程技術
- 三五族金氧半電晶體 (MOSFET)表面處理技術
- AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
  Yen-Ku Lin, Shuichi Noda, Hsiao-Chieh Lo, Shih-Chien Liu, Chia-Hsun Wu, Yuen-Yee Wong, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Seiji Samukawa, and Edward Yi Chang, “AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications “ Electron Device Letters, vol 37, No 11, Nov. 2016.
- Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment
  Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Shih-Chien Liu, Yen-Ku Lin, Simon M. Sze, and Edward Yi Chang,”Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment” IEEE Transactions on Electron Devices, vol. 63, no. 9, Sep. , 2016.
  Szu-Ping Tsai, Heng-Tung Hsu, Joachim Wuerfl, and Edward Yi Chang,” Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design” IEEE Transactions on Electron Devices, vol. 63, no. 10, Oct. , 2016.
- Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
  Sa Hoang Huynh, Minh Thien Huu Ha, Huy Binh Do, Quang Ho Luc, Hung Wei Yu, and Edward Yi Chang,” Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition” Applied Physics Letters(APL) 109102107, pp.1-4, Sep. 2016.
- Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials
  Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Chenming Hu, Yueh Chin Lin, and Edward Yi Chang, “Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials “ Electron Device Letters, vol 37, No 9, Sep. 2016.
- Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition
  Chih-Jen Hsiao, Minh-Thien-Huu Ha, Chun-Kuan Liu, Hong-Quan Nguyen, Hung-Wei Yu, Sheng-Po Chang, Yuen-Yee Wong, Jer-Shen Maa, Shoou-Jinn Chang, Edward Yi Chang, “Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition,” J Mater Sci: Mater Electron, s10854-016-5599-6, p. 1-13, Aug. 2016.
- Growth of ultrathin GaSb layer on GaAs using metal–organic chemical vapor deposition with Sb interfacial treatment
  Chih-Jen Hsiao, Minh-Thien-Huu Ha, Ching-Yi Hsu, Yueh-Chin Lin, Sheng-Po Chang, Shoou-Jinn Chang, and Edward Yi Chang, “Growth of ultrathin GaSb layer on GaAs using metal–organic chemical vapor deposition with Sb interfacial treatment,” Applied Physics Express (APEX) 9, 095502 p. 1-4, Aug. 2016.
- Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors
  Quang Ho Luc, Shou Po Cheng, Po Chun Chang, Huy Binh Do, Jin Han Chen, Minh Thien Huu Ha, Sa Hoang Huynh, Chenming Calvin Hu, Yueh Chin Lin, and Edward Yi Chang, “Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors “ Electron Device Letters, vol 37, No 8, Aug. 2016.
- Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors
  Niraj M Shrestha, Yiming Li, and Edward Yi Chang, “Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors,” Semicond. Sci. Technol. Vol. 31, pp. 075006 -1-8, Jun., 2016.
- High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices
  Yu Sheng Chiu, Jen Ting Liao, Yueh Chin Lin, Shin Chien Liu, Tai Ming Lin,Hiroshi Iwai, Kuniyuki Kakushima, and Edward Yi Chang, “High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices,” Japanese Journal of Applied Physics (JJAP), Vol. 55, pp. 051001-1-6, Apri., 2016
- High-frequency performances of superjunction laterally diffused metal–oxide–semiconductor transistors for RF power applications
  Bo-Yuan Chen, Kun-Ming Chen, Chia-Sung Chiu, Guo-Wei Huang, and Edward Yi Chang, “High-frequency performances of superjunction laterally diffused metal–oxide–semiconductor transistors for RF power applications,” Japanese Journal of Applied Physics (JJAP), Vol. 55, pp.04ER09, Mar., 2016.
- Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications
  Ting-En Hsieh, Yueh-Chin Lin, Chung-Ming Chu,Yu-Lin Chung, Yu-Xiang Huang, Wang-Cheng Shi,Chang-Fu Dee, Burhanuddin Yeop Majlis, Wei-I Lee, and Edward-Yi Chang, “Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications,” Journal of Electronic Materials, Vol 45, No. 7,p p. 3285-3289, April 2016
- Improved linearity and reliability in GaN metal-oxide-semiconductor high-electronic-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
  Ching-Hsiang Hsu, Wang-Cheng Shih, Yueh-Chin Lin, Heng-Tung Hsu, Hisang-Hua Hsu, Yu-Xiang Huang, Tai-Wei Lin, Chia-Hsun Wu, Wen-Hao Wu, Jer-Shen Maa, Hiroshi Iwai, Kuniyuki Kakushima, and Edward Yi Chang, “Improved linearity and reliability in GaN metal-oxide-semiconductor high-electronic-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric,” Japanese Journal of Applied Physics (JJAP), Vol. 55, pp.04EG04, Mar., 2016.
- Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures
  Wei-Ching Huang, Chung-Ming Chu , Yuen-Yee Wong , Kai-Wei Chen , Yen-Ku Lin ,Chia-Hsun Wu , Wei-I Lee ,and Edward-Yi Chang, “Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures,” Materials Science in Semiconductor Processing, Vol 45,p p. 1-8, January 2016
- The reliability study for a stacking high-κ La2O3/HfO2 and HfO2/La2O3 design in an n-In0.53Ga0.47As MOS capacitor
  Chung-Ming Chu, Yueh-Chin Lin, Wei-I Lee, Chang Fu Dee, B. Y. Majlis, M. M Salleh, S. L. Yap, and Edward Yi Chang, “The reliability study for a stacking high-κ La2O3/HfO2 and HfO2/La2O3 design in an n-In0.53Ga0.47As MOS capacitor,” Applied Physics Express (APEX) 9, 021203p. 1-4, January 2016
- A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
  Faiz Aizad Fatah, Yueh-Chin Lin, Ren-Xuan Liu, Kai-Chun Yang, Tai-We Lin, Heng-Tung Hsu, Jung-Hsiang Yang, Yasuyuki Miyamoto, Hiroshi Iwai, Chenming Calvin Hu, Sayeef Salahuddin and Edward Yi Chang, “A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications,” Applied Physics Express (APEX) 9, 026502p. 1-4, January 2016
- Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor
  Wen-Hao Wu, Yueh-Chin Lin, Tzu-Ching Hou, Tai-Wei Lin, Hisang-Hua Hsu, Yuen-Yee Wong, Hiroshi Iwai, Kuniyuki Kakushima, Edward Yi Chang, “Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor” Electronics Letters, Volume 52, Issue 1, 08 January 2016, p. 59 – 61.
- Suppressing Non-Uniform Tunneling in InAs/GaSb TFET With Dual-Metal Gate
  Ching-Yi Hsu, Chun-Yen Chang Edward Yi Chang and Chenming Hu “Suppressing Non-Uniform Tunneling in InAs/GaSb TFET With Dual-Metal Gate“ Journal of Electron Devices Society, Vol. 4, No.2 pp.60-65, Dec., 2015.
- Effective surface treatment for GaN metal–insulator–semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation
  Shih-Chien Liu, Hai-Dang Trinh, Gu-Ming Dai, Chung-Kai Huang, Chang-Fu Dee, Burhanuddin Yeop Majlis, Dhrubes Biswas, and Edward Yi Chang “Effective surface treatment for GaN metal–insulator–semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation “ Japanese Journal of Applied Physics (JJAP), Vol. 55, pp.01AD06-1-5, Nov., 2015
- Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications
  Faiz Aizad Fatah, Yueh-Chin Lin, Tsung-Yun Lee, Kai-Chun Yang, Ren-Xuan Liu, Jing-Ray Chan, Heng-Tung Hsu, Yasuyuki Miyamoto and Edward Yi Chang, “Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications”. Solid State Sci. Technol. 2015 volume 4, issue 12, N157-N159.
- Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
  Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Chenming Calvin Hu, Yueh Chin Lin, and Edward Yi Chang, ” Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack” IEEE Transactions on Electron Devices (TED), VOL.62, NO.12, December 2015
- Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
  Quang Ho Luc, Huy Binh Do, Minh Thien Huu Ha, Chenming Calvin Hu, Yueh Chin Lin, and Edward Yi Chang, “Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density “ Electron Device Letters, vol 36, No 12, December 2015
- GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications
  Ting-En Hsieh, Yueh-Chin Lin, Fang-Ming Li, Wang-Cheng Shi, Yu-Xiang Huang, Wei-Cheng Lan, Ping-Chieh Chin, and Edward Yi Chang,” GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications," Journal of Electronic Materials, Vol. 44, No. 12,Oct. 2015
- The reliability study of III–V solar cell with copper based contacts
  Ching-Hsiang Hsu, , Edward Yi Chang, Hsun-Jui Chang, Jer-Shen Maa, Krishna Pande, "The reliability study of III–V solar cell with copper based contacts" Solid-State Electronics, Vol 114, Pages 174–177, December 2015
- Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxy
  Chia-Hsin Wu , Chu-Shou Yang, Yen-Chi Wang , Hsi-Jung Huang , Yen-Teng Ho , Lin-Lung Wei , and Edward Yi Chang, “Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxy”, Phys. Status Solidi A, vol. 212, no. 10, pp. 2201–2204, July 2015. (IF=1.616, Rank=70/144, SCI)
- Broadband antireflection sub-wavelength structure of InGaP/InGaAs/Ge triple junction solar cell with composition-graded SiNx
  Chen-Chen Chung, Hsiao-Chieh Lo, Yen-Ku Lin, Hung-Wei Yu, Binh Tinh Tran, Kung- Liang Lin, Yung Chang Chen, Nguyen-Hong Quan, Edward Yi Chang, Yuan-Chieh Tseng,” Broadband antireflection sub-wavelength structure of InGaP/InGaAs/Ge triple junction solar cell with composition-graded SiNx” Materials Research Express, Vol 2, No 5 ,MAY 2015
- Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support
  Yuping Zeng, Chien-I Kuo, Chingyi Hsu, Mohammad Najmzadeh, Angada Sachid, Rehan Kapadia, Chunwing Yeung, Edward Chang, Chenming Hu, Ali Javey,” Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support” IEEE Transactions on Nanotechnology , VOL. 14, NO. 3, pp 580-584, MAY 2015
- Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation
  Tien-Tung Luong, Binh Tinh Tran, Yen-Teng Ho, Minh-Thien-Huu Ha, Yu-Lin Hsiao, Shih-Chien Liu, Yu-Sheng Chiu, Edward-Yi Chang,“Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation” Electronic Materials Letters, Vol. 11, pp. 217-224, March, 2015.
- Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high electron mobility transistor for power applications
  Ting-En Hsieh, Yueh-Chin Lin, Jen-Ting Liao, Wei-Cheng Lan, Ping-Chieh Chin and Edward Yi Chang,“Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high electron mobility transistor for power applications,” Applied Physics Express, vol. 8, pp. 104102, September, 2015.
- Layered MoS2 grown on c-sapphire by pulsed laser deposition
  Yen-Teng Ho, Chun-Hao Ma, Tien-Tung Luong, Lin-Lung Wei, Tzu-Chun Yen, Wei-Ting Hsu, Wen-Hao Chang, Yung-Ching Chu, Yung-Yi Tu, Krishna Prasad Pande, and Edward Yi Chang “Layered MoS2 grown on c-sapphire by pulsed laser deposition “ Phys. Status Solidi RRL, vol 9, No 3, pp. 187-191, March, 2015
- 2H-silicon carbide epitaxial growth on c -plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments
  Tien-Tung Luong, Binh Tinh Tran, Yen-Teng Ho, Ting-Wei Wei, Yue-Han Wu, Tzu-Chun Yen, Lin-Lung Wei, Jer-Shen Maa, Edward Yi Chang “2H-silicon carbide epitaxial growth on c -plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments “Electronic Materials Letters, Vol. 11, No. 3, pp.352-359, May, 2015.
- 適用於銅製程的半導體裝置
  類別：發明專利
  國別：南韓
  專利號碼：10-1408332
  發明人：張翼,張嘉華,林岳欽,陳宥綱,謝廷恩
  專利權人：國立交通大學
  專利核准日期：2012/05 至 2032/05
  計畫編號：98 - 2923 - E - 009 - 002 - MY3
- 適用於銅製程的半導體裝置
  類別：發明專利
  國別：美國
  專利號碼：US 8,735,904 B2
  發明人：張翼,張嘉華,林岳欽,陳宥綱,謝廷恩
  專利權人：國立交通大學
  專利核准日期：2012/02 至 2032/02
  計畫編號：98 - 2923 - E - 009 - 002 - MY3
- 三五族金屬-氧化物-半導體元件
  類別：發明專利
  國別：美國
  專利號碼：US 8,519,488 B2
  發明人：張翼,林岳欽
  專利權人：國立交通大學
  專利核准日期：2013/08 至 2033/02
  計畫編號：98 - 2923 - E - 009 - 002 - MY3
- 一種在矽晶上成長之高載子遷移率電晶體結構及其方法
  類別：發明專利
  國別：美國
  專利號碼：US 8,796,117 B2
  發明人：張翼,唐士軒,林岳欽
  專利權人：國立交通大學
  專利核准日期：2014/08 至 2032/07
  計畫編號：98 - 2120 - M - 009 - 010 -
- 具有氮化鎵層的多層結構基板及其製法
  類別：發明專利
  國別：美國
  專利號碼：US 8,536,616 B2
  發明人：張翼,蕭佑霖,呂榮淇
  專利權人：國立交通大學
  專利核准日期：2013/09 至 2032/08
  計畫編號：98 - 2120 - M - 009 - 010 -
- 氮化鎵電晶體的製作方法
  類別：發明專利
  國別：美國
  專利號碼：US 8,420,421 B2
  發明人：張翼,張嘉華,林岳欽
  專利權人：國立交通大學
  專利核准日期：2013/04 至 2031/05
  計畫編號：98 - 2923 - E - 009 - 002 - MY3
- 氮化鎵電晶體的製作方法
  類別：發明專利
  國別：日本
  專利號碼：特許 5645766
  發明人：張翼,張嘉華,林岳欽
  專利權人：國立交通大學
  專利核准日期：2014/11 至 2031/07
  計畫編號：98 - 2923 - E - 009 - 002 - MY3
- 一種在矽晶片上成長之高載子遷移率電晶體結構及其方法
  類別：發明專利
  國別：中華民國
  專利號碼：I419326
  發明人：張翼,唐士軒,林岳欽
  專利權人：國立交通大學
  專利核准日期：2013/12 至 2031/08
  計畫編號：98 - 2120 - M - 009 - 010 -
- 適用於銅製程的半導體裝置
  類別：發明專利
  國別：中華民國
  專利號碼：I441303
  發明人：張翼,張嘉華,林岳欽,陳宥綱,謝廷恩
  專利權人：國立交通大學
  專利核准日期：2014/06 至 2031/06
  計畫編號：98 - 2923 - E - 009 - 002 - MY3
- 串接式之高電子遷移率電晶體元件及其製造方法
  類別：發明專利
  國別：南韓
  專利號碼：10-1377165
  發明人：張翼,許恆通
  專利權人：國立交通大學
  專利核准日期：2014/03 至 2031/03
  計畫編號：98 - 2923 - E - 009 - 002 - MY3
- 具有氮化鎵層的多層結構基板及其製法
  類別：發明專利
  國別：日本
  專利號碼：特許 5449121
  發明人：張翼,蕭佑霖,呂榮淇
  專利權人：國立交通大學
  專利核准日期：2014/01 至 2030/12
  計畫編號：98 - 2120 - M - 009 - 010 -
- 具有氮化鎵層的多層結構基板及其製法
  類別：發明專利
  國別：美國
  專利號碼：US 8,263,425 B2
  發明人：張翼,蕭佑霖,呂榮淇
  專利權人：國立交通大學
  專利核准日期：2012/09 至 2030/12
  計畫編號：98 - 2120 - M - 009 - 010 -
- 氮化鎵電晶體的製作方法
  類別：發明專利
  國別：中華民國
  專利號碼：I421947
  發明人：張翼,張嘉華,林岳欽
  專利權人：國立交通大學
  專利核准日期：2014/01 至 2030/11
  計畫編號：98 - 2923 - E - 009 - 002 - MY3
- 具有氮化鎵層的多層結構基板及其製法
  類別：發明專利
  國別：中華民國
  專利號碼：I414004
  發明人：張翼,蕭佑霖,呂榮淇
  專利權人：國立交通大學
  專利核准日期：2013/11 至 2030/10
  計畫編號：98 - 2120 - M - 009 - 010 -
- 高電子遷移率電晶體及其製作方法
  類別：發明專利
  國別：美國
  專利號碼：US 8,169,002 B2
  發明人：張翼,郭建億,許恆通
  專利權人：國立交通大學
  專利核准日期：2010/04 至 2031/01
  計畫編號：97 - 2221 - E - 009 - 156 - MY2
- 增強式高電子移動率電晶體及其製造方法
  類別：發明專利
  國別：中華民國
  專利號碼：I420664
  發明人：張翼,張嘉華,林岳欽
  專利權人：國立交通大學
  專利核准日期：2013/12 至 2030/07
  計畫編號：98 - 2923 - E - 009 - 002 - MY3
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  類別：發明專利
  國別：中華民國
  專利號碼：I404209
  發明人：張翼,郭建億,許恆通
  專利權人：國立交通大學
  專利核准日期：2013/08 至 2029/12
  計畫編號：97 - 2221 - E - 009 - 156 - MY2
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  類別：發明專利
  國別：中華民國
  專利號碼：I 440074
  發明人：張翼,黃延儀
  專利權人：國立交通大學
  專利核准日期：2014/06 至 2030/04
  計畫編號：97 - 2221 - E - 009 - 156 - MY2
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  類別：發明專利
  國別：美國
  專利號碼：US 8,034,654 B2
  發明人：張翼,唐士軒,林岳欽
  專利權人：國立交通大學
  專利核准日期：2009/08 至 2029/12
  計畫編號：96 - 2752 - E - 009 - 001 - PAE
- 於矽晶片上形成太陽能電池之矽鍺層的方法
  類別：發明專利
  國別：日本
  專利號碼：特許 5001985
  發明人：張翼,唐士軒,林岳欽
  專利權人：國立交通大學
  專利核准日期：2012/05 至 2029/09
  計畫編號：96 - 2752 - E - 009 - 001 - PAE
- 於矽晶片上形成太陽能電池之矽鍺層的方法
  類別：發明專利
  國別：中華民國
  專利號碼：I377690
  發明人：張翼,唐士軒,林岳欽
  專利權人：國立交通大學
  專利核准日期：2012/11 至 2028/11
  計畫編號：96 - 2752 - E - 009 - 001 - PAE
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  類別：發明專利
  國別：美國
  專利號碼：7,501,348 B2
  發明人：張翼,陳仕鴻,連亦中
  專利權人：國立交通大學
  專利核准日期：2007/04 至 2027/04
  計畫編號：95 - 2752 - E - 009 - 001 - PAE
- 一種形成半導體深次微米線寬結構的方法
  類別：發明專利
  國別：中華民國
  專利號碼：I319208
  發明人：張翼,陳仕鴻,連亦中
  專利權人：國立交通大學
  專利核准日期：2010/01 至 2026/12
  計畫編號：95 - 2752 - E - 009 - 001 - PAE
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  類別：發明專利
  國別：中華民國
  專利號碼：I265564
  發明人：張翼,陳仕鴻,郭建億
  專利權人：國立交通大學
  專利核准日期：2006/11 至 2025/09
  計畫編號：93 - 2752 - E - 009 - 003 - PAE
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  類別：發明專利
  國別：美國
  專利號碼：US 7,420,227 B2
  發明人：張翼,張尚文,李承士
  專利權人：國立交通大學
  專利核准日期：2005/06 至 2025/06
  計畫編號：92 - 2215 - E - 009 - 069 -
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  類別：發明專利
  國別：中華民國
  專利號碼：I254419
  發明人：張翼,張尚文,李承士
  專利權人：國立交通大學
  專利核准日期：2006/05 至 2025/04
  計畫編號：92 - 2215 - E - 009 - 069 -
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  類別：新型專利
  國別：中華民國
  專利號碼：209838
  發明人：李承士,張翼
  專利權人：國立交通大學
  專利核准日期：2003/04 至 2014/06
  計畫編號：89 - 2215 - E - 009 - 111 -
- 在矽晶片上成長鍺薄膜及在矽鍺晶片上成長砷化鎵磊晶之方法
  類別：發明專利
  國別：美國
  專利號碼：7259084B2
  發明人：張翼,楊宗火喜,羅廣禮,張俊彥
  專利權人：國立交通大學
  專利核准日期：2003/11 至 2023/11
  計畫編號：91 - 2215 - E - 009 - 036 -
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  類別：發明專利
  國別：美國
  專利號碼：6943068B2
  發明人：張翼,李晃銘
  專利權人：國立交通大學
  專利核准日期：2003/11 至 2023/11
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  類別：發明專利
  國別：中華民國
  專利號碼：194183
  發明人：張翼,李晃銘
  專利權人：國立交通大學
  專利核准日期：2004/01 至 2023/05
  計畫編號：91 - 2215 - E - 009 - 036 -
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  類別：發明專利
  國別：中華民國
  專利號碼：182773
  發明人：李承士,張翼
  專利權人：國立交通大學
  專利核准日期：2003/07 至 2022/07
  計畫編號：89 - 2215 - E - 009 - 111 -
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  類別：發明專利
  國別：中華民國
  專利號碼：226666
  發明人：張翼,張晃崇,傅國貴
  專利權人：國立交通大學
  專利核准日期：2005/01 至 2021/11
  計畫編號：90 - 2215 - E - 009 - 103 -
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  類別：新型專利
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  專利號碼：209838
  發明人：李承士,張翼
  專利權人：國立交通大學
  專利核准日期：2003/04 至 2014/06
  計畫編號：89 - 2215 - E - 009 - 111 -
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  類別：發明專利
  國別：中華民國
  專利號碼：221001
  發明人：張翼,楊宗火喜,羅廣禮,張俊彥
  專利權人：國立交通大學
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  類別：發明專利
  國別：中華民國
  專利號碼：222675
  發明人：張翼,李承士
  專利權人：國立交通大學
  專利核准日期：2004/10 至 2023/06
  計畫編號：89 - 2215 - E - 009 - 111 -
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  類別：發明專利
  國別：美國
  專利號碼：6787910
  發明人：李承士,張翼
  專利權人：國立交通大學
  專利核准日期：2002/07 至 2022/07
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  類別：發明專利
  國別：美國
  專利號碼：5766967
  發明人：Y-L Lai, H.D.Yang,C.Y.Chang,E.Y.Chang
  專利權人：Industrial Technology Research Institut
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  類別：發明專利
  國別：中華民國
  專利號碼：073162
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  類別：發明專利
  國別：中華民國
  專利號碼：085474
  發明人：賴永齡,楊泓斌, 張俊彥,張翼,中村一光, 張瑞裕
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  類別：發明專利
  國別：美國
  專利號碼：US 8,435,875 B1
  發明人：張翼,成維華,林岳欽,張嘉華,劉世謙,黃祿哲
  專利權人：國立交通大學
  專利核准日期：2012/06 至 2032/06
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  類別：發明專利
  國別：中華民國
  專利號碼：I455212
  發明人：張翼,成維華,林岳欽,張嘉華,劉世謙,黃祿哲
  專利權人：國立交通大學
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  類別：發明專利
  國別：中華民國
  專利號碼：222675
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  專利核准日期：2004/10 至 2024/09
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  國別：中華民國
  專利號碼：569077
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  專利號碼：540160
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  類別：發明專利
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  專利核准日期：2003/07 至 2013/07
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  類別：發明專利
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  類別：發明專利
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  專利號碼：I267946
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  計畫編號：93 - EC17 - A - 05 - S1 - 020
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  類別：發明專利
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  發明人：張翼,陳仕鴻,郭建億, 戴忠霖
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  計畫編號：92 - EC17 - A - 05S1 - 020 -
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  類別：發明專利
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  專利號碼：I254419
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  計畫編號：92 - 2215 - E - 009 - 069 -
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  專利核准日期：2012/06 至 2029/06
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  專利號碼：I267845
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  國別：美國
  專利號碼：US 7,829,448 B2
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  專利號碼：美國US 8,169,002 B2
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  專利號碼：US 8,034,654 B2
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  專利號碼：US 8,033,039 B2
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  類別：發明專利
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  專利核准日期：1997/04 至 2004/03
- 六吋矽基板之氮化鎵高電子遷移率電晶體磊晶材料技術
  授權單位：國立交通大學
  被授權單位：華上光電
  簽約日期：2008/06 至 2011/06
- Reduction of Surface Recombinatio n for SiN on GaAs Devices
  授權單位：國立交通大學
  被授權單位：太聚能源公司
  簽約日期：2007/06 至 2012/06
- 三五族半導體表面鈍化技術
  授權單位：國立交通大學
  被授權單位：美商ATMI
  簽約日期：2011/06 至 2012/06
- 三五族Si晶圓異質整合磊晶及元件技術
  授權單位：國立交通大學
  被授權單位：台灣積體電路製造股份有限公司
  簽約日期：2010/06 至 2012/06
- 銅製程導入量產技術授權開發計劃與 S-Band 功率元件技術
  授權單位：國立交通大學
  被授權單位：穩懋半導體
  簽約日期：2008/06 至 2011/06
- InAs-based QWFETs technology for High Speed, Low Power Application
  授權單位：國立交通大學
  被授權單位：Intel Corporation
  簽約日期：2007/06 至 2008/06
- InAs&Ge QWFET technology for high speed low power application
  授權單位：國立交通大學
  被授權單位：Intel Corporation
  簽約日期：2008/06 至 2001/06
- 應用在高頻三五族元件純錫凸塊製程技術
  授權單位：國立交通大學
  被授權單位：永光化學工業公司
  簽約日期：2008/06 至 2010/06
- Technology transfer of Passive of active devices
  授權單位：國立交通大學
  被授權單位：Malaysia Telekom Research & Development SdnBhd(TMR&D)
  簽約日期：2007/06 至 2008/06
- Technology transfer of high performance GaAs MMIC technology
  授權單位：國立交通大學
  被授權單位：Malaysia Telekom Research & Development SdnBhd(TMR&D)
  簽約日期：2008/06 至 2011/06
- 奈米元件技術製程
  授權單位：國立交通大學
  被授權單位：Samsung Cheil
  簽約日期：2007/06 至 2008/06
- III-V FETs
  授權單位：國立交通大學
  被授權單位：先進科材股份有限公司
  簽約日期：2014/01 至 2014/12
- Develop a Miniature GaN direct Gate Driver for Power Electronic Systems
  授權單位：國立交通大學
  被授權單位：PANASONIC CORPORATION
  簽約日期：2013/08 至 2015/03
- 氮化鎵功率元件整合製程技術報告等3項
  授權單位：國立交通大學
  被授權單位：國防部中山科學研究院
  簽約日期：2013/10 至 2013/12
- 氮化鎵蕭特基二極體製造技術
  授權單位：國立交通大學
  被授權單位：典琦科技股份有限公司
  簽約日期：2013/11 至 2014/11
- A small wireless EEG/ECG sensor system for health monitoring
  授權單位：國立交通大學
  被授權單位：PANASONIC CORPORATION
  簽約日期：2013/04 至 2015/04
- The Fabrication, Testing, and Delivery of High fTInPHEMT
  授權單位：國立交通大學
  被授權單位：QuinStar Technology, Inc.
  簽約日期：2013/03 至 2013/09
- A Micro Fluidics Total Analysis System for DNA sensing
  授權單位：國立交通大學
  被授權單位：PANASONIC CORPORATION
  簽約日期：2013/02 至 2015/01
- GaAs/InGaAs MMIC research, circuit design, and process technologies
  授權單位：國立交通大學
  被授權單位：PANASONIC CORPORATION
  簽約日期：2012/09 至 2014/03
- 氮化鎵元件封裝與電性測試技術
  授權單位：國立交通大學
  被授權單位：捷準科技股份有限公司
  簽約日期：2012/11 至 2013/11
- 磊晶即時量測系統應用於氮化鎵磊晶技術
  授權單位：國立交通大學
  被授權單位：財團法人工業技術研究院
  簽約日期：2012/10 至 2017/10
- III-V MOSCAP Process Development
  授權單位：國立交通大學
  被授權單位：Advanced Technology Materials, Inc.
  簽約日期：2012/01 至 2012/12
- 以堆疊式 pHEMT架構設計L頻段低雜訊放大器
  授權單位：國立交通大學
  被授權單位：國防部中山科學研究院
  簽約日期：2011/08 至 2011/10
- Feasibility study of InAs and Ge based QWFETs for Ultra-High Speed, Low Power Logic Applications
  授權單位：國立交通大學
  被授權單位：Intel /英特爾數位科技
  簽約日期：2010/11 至 2011/10
- GaN MISHEMT Power Device Process Development
  授權單位：國立交通大學
  被授權單位：台灣積體電路製造股份有限公司
  簽約日期：2010/09 至 2030/08
  計畫編號：97 - 2221 - E - 009 -156 - MY2
- III-V MOSCAP/M OSFET Process Development
  授權單位：國立交通大學
  被授權單位：台灣積體電路製造股份有限公司
  簽約日期：2011/09 至 2016/06
  計畫編號：99 - 2120 - M - 009 -005 -
- Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics.
  Szu-Ping Tsai, Heng-Tung Hsu, Yung-Yi Tu and Edward Yi Chang (2015, Feb). Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics. Appl. Phys. Express 8, 034101-1-4. 本人為通訊作者.
- Influences of AlN Buffer Layer Thickness on The Material and Electrical Properties of InAlN/GaN High-Electron-Mobility Transistors (HEMTs).
  Wei-Ching Huang, Kuan-Shin Liu, Yuen-Yee Wong, Chi-Feng Hsieh, Edward-Yi Chang, Heng-Tung Hsu (2015, Feb). Influences of AlN Buffer Layer Thickness on The Material and Electrical Properties of InAlN/GaN High-Electron-Mobility Transistors (HEMTs). Japanese Journal of Applied Physics 54, 071001-1-6. 本人為通訊作者.
- Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells.
  Ching-Hsiang Hsu, Edward Yi Chang, Hsun-Jui Chang, Hung-Wei Yu, Hong Quan Nguyen, Chen-Chen Chung, Jer-Shen Maa, Krishna Pande (2014, Dec). Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells. IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 12,1275-1277. 本人為通
  訊作者.
- GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications.
  Shih-Chien Liu, Bo-Yuan Chen, Yueh-Chin Lin, Ting-En Hsieh, Huan-Chung Wang, and Edward Yi Chang (2014, Oct). GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications. Electron Device Letters, VOL. 35, NO. 10,1001~1003. (SCI). 本人為通訊作者.
- Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate.
  Y. L. Hsiao, Y. J. Wang, C. A. Chang, Y. C. Weng, Y. Y. Chen, K. W. Chen, J. S. Maa, and E. Y. Chang (2014, Oct). Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate. Applied Physics Express 7, 115501,1~4. (SCI). 本人為通訊作者.
- Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer.
  Quang Ho Luc, Edward Yi Chang, Hai Dang Trinh, Yueh Chin Lin, Hong Quan Nguyen, Yuen Yee Wong, Huy Binh Do, Sayeef Salahuddin, and Chenming Calvin Hu (2014, Aug). Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 8,2774~2778.
  (SCI). 本人為通訊作者.
- Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors.
  Y. Y. Wong, E. Y. Chang, W. C. Huang, Y. C. Lin, Y. Y. Tu, K. W. Chen and H. W. Yu (2014, Aug). Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors. Applied Physics Express 7, 095502,1~4. (SCI). 本人為通訊作者.
- Efficiency improvement of InGaP/GaAs/Ge solar cells by hydrothermal-deposited ZnO nanotube structure.
  Chen-Chen Chung, Binh Tinh Tran, Kung-Liang Lin, Yen-Teng Ho, Hung-Wei Yu, Nguyen-Hong Quan and Edward Yi Chang (2014, Jul). Efficiency improvement of InGaP/GaAs/Ge solar cells by hydrothermal-deposited ZnO nanotube structure. Nanoscale Research Letters, vol 9,1~5. (SCI). 本人為通訊作者.
- Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect.
  Szu-Ping Tsai, Heng-Tung Hsu, Che-Yang Chiang, Yung-Yi Tu, Chia-Hua Chang, Ting-En Hsieh, Huan-Chung Wang, Shih-Chien Liu, and Edward Yi Chang (2014, Jul). Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect. Electron Device Letters, vol 35, No 7,735~737. (SCI). 本人為通訊作者.
- Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer.
  Ting-En Hsieh, Edward Yi Chang, Yi-Zuo Song, Yueh-Chin Lin, Huan-Chung Wang, Shin-Chien Liu, Sayeef Salahuddin, and Chenming Calvin Hu (2014, Jul).Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer. Electron Device Letters, VOL. 35, NO. 7,732~734. (SCI). 本人為通訊作者.
- Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate.
  Y. C. Lin, M. L. Huang, C. Y. Chen, M. K. Chen, H. T. Lin, P. Y. Tsai, C. H. Lin, Hui-Cheng Chang, T. L. Lee, C. C. Lo, S. M. Jang, C. H. Diaz, H. Y. Hwang, Y. C. Sun, and E. Y. Chang (2014, Apr). Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate. Applied Physics Express 7, 041202,1-4. (SCI). 本人為通訊作者.
- Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure ﬁeld effect transistors on Si substrates.
  Yu-Lin Hsiao, Chia-Ao Chang, Edward Yi Chang, Jer-Shen Maa, Chia-Ta Chang, Yi-Jie Wang, and You-Chen Weng (2014, Apr). Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure ﬁeld effect transistors on Si substrates. Applied Physics Express 7, 055501,1~4. (SCI). 本人為通訊作者.
- Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application.
  Wen-Hao Wu, Yueh-Chin Lin, Ting-Wei Chuang, Yu-Chen Chen, Tzu-Ching Hou, Jing-Neng Yao, Po-Chun Chang, Hiroshi Iwai, Kuniyuki Kakushima and Edward Yi Chang (2014, Feb). Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application. Applied Physics
  Express 7, 031201,1~4. (SCI). 本人為通訊作者.
- Investigation of the Flip-chip Package with BCB Underfill for W-band Applications.
  Chin-Te Wang, Li-Han Hsu, Wei-Cheng Wu, Heng-Tung Hsu, Edward Yi Chang, Yin-Chu Hu, Ching-Ting Lee, and Szu-Ping Tsai (2014, Jan). Investigation of the Flip-chip Package with BCB Underfill for W-band Applications. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 24, NO. 1,11~13. (SCI). 本人為通訊作者.
- Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology.
  Chin-Te Wang, Heng-Tung Hsu, Che-Yang Chiang, Edward Yi Chang, and Wee-Chin Lim (2013, Nov). Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology. Applied Physics Express 6 , 126701,1~4. (SCI). 本人為通訊作者.
- Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors with Different Annealing Temperatures.
  Yueh Chin Lin, Hai Dang Trinh, Ting Wei Chuang, Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, Chun Hsiung Lin, Carlos H. Diaz, Fel, Hui Chen Chang, Simon M. Jang, and E. Y. Chang. (2013, Oct). Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors with Different Annealing Temperatures.
  Electron Device Letters, VOL. 34, NO. 10,1~3. (SCI). 本人為通訊作者.
- low resistance copper-based ohmic contact for AlGaN/GaN high mobility transistors.
  Yuen-Yee Wong, Yu-Kong Chen, Jer-Shen Maa, Yung-Yi Tu, Hung-Wei Yu, Chang-Fu Dee, Chi-Chin Yap, Edward Yi Chang (2013, Oct). low resistance copper-based ohmic contact for AlGaN/GaN high mobility transistors. Applied Physics Letters , 152104,1~4. (SCI). 本人為通訊作者.
- Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density.
  Hai-Dang Trinh, Yueh-Chin Lin, Minh-Thuy Nguyen, Hong-Quan Nguyen, Quoc-Van Duong,2 Quang-Ho Luc, Shin-Yuan Wang, Manh-Nghia Nguyen, and Edward Yi Chang (2013, Sep). Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density. APPLIED PHYSICS LETTERS, 142903,1~5. (SCI). 本人為通訊作者.
- Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application.
  Yueh-Chin Lin, Chih-Hsiang Chang, Fang-Ming Li, Li-Han Hsu, and Edward Yi Chang (2013, Sep). Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application. Applied Physics Express(APEX) 6, 091003,1~3. (SCI). 本人為通訊作者.
- Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperature.
  Hai Dang Trinh, Yueh Chin Lin, Edward Yi Chang, Ching-Ting Lee, Shin-Yuan Wang, Hong Quan Nguyen, Yu Sheng Chiu, Quang Ho Luc, Hui-Chen Chang, Chun-Hsiung Lin, Simon Jang, and Carlos H. Diaz (2013, May). Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperature. IEEE TRANSACTIONS ON ELECTRON DEVICES,
  VOL. 60, NO. 5,1555~1560. (SCI). 本人為通訊作者.
- Band Alignment Parameters of Al2O3/InSb Metal–Oxide–Semiconductor Structure and Their Modification with Oxide Deposition Temperatures.
  Hai Dang Trinh1, Minh Thuy Nguyen, Yueh Chin Lin, Quoc Van Duong, Hong Quan Nguyen, and Edward Yi Chang (2013, May). Band Alignment Parameters of Al2O3/InSb Metal–Oxide–Semiconductor Structure and Their Modification with Oxide Deposition Temperatures. Applied Physics Express 6, 061202,1~3. (SCI). 本人為通訊作者.
- InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications.
  Edward-Yi Chang, Chien-I Kuo, Heng-Tung Hsu, Che-Yang Chiang, and Yasuyuki Miyamoto (2013, Feb). InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications. Applied Physics Express 6, 034001,1~3. (SCI). 本人為第一作者、通訊作者.
- In 0.5Ga 0.5As -Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition.
  Nguyen, H.Q., Trinh, H.D., Chang, E.Y., Lee, C.T., Shin Yuan Wang, Yu H.W., Hsu C.H., Nguyen, C.L. (2013, Jan). In 0.5Ga 0.5As -Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, NO. 1,235~240. (SCI). 本人為通訊作者.
- Ge Epitaxial Films on GaAs (100), (110) and (111) Substrates for Applications of CMOS Heterostructural Integrations.
  Shih Hsuan Tang, Edward-Yi Chang, Chien-I Kuo, Hai-Dang Trinh, Hong-Quan Nguyen , Chi-Lang Nguyen , Guang Li Luo (2013, Jan). Ge Epitaxial Films on GaAs (100), (110) and (111) Substrates for Applications of CMOS Heterostructural Integrations. Journal of Vacuum Science & Technology B, 021203,1~6. (SCI). 本人為通訊作者.
- Ti/Pt/Ti/Cu-Metallized Interconnects for GaN HEMTs on Si Substrate.
  Yueh-Chin Lin, Tza-Yao Kuo, Yu-Lin Chuang, Chien-Hua Wu, Chia-Hua Chang, Kuan-Ning Huang, Edward Yi Chang (2012, May). Ti/Pt/Ti/Cu-Metallized Interconnects for GaN HEMTs on Si Substrate. Applied Physics Express 5 , 066503,1~3. (SCI). 本人為通訊作者.
- Fabrication andcharacterizationofn-In0.4Ga0.6N/p-Si solarcell.
  Binh-Tinh Tran, Edward-Yi Chang, Hai-Dang Trinh (2012, Apr). Fabrication andcharacterizationofn-In0.4Ga0.6N/p-Si solarcell. Solar EnergyMaterials&SolarCells, 102,208~211. (SCI). 本人為通訊作者.
- Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition.
  Hong-Quan Nguyen, Edward Yi Chang, Hung-Wei Yu, Hai-Dang Trinh, Chang-Fu Dee, Yuen-Yee Wong, Ching-Hsiang Hsu, Binh-Tinh Tran, and Chen-Chen Chung (2012, Apr). Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition. Applied
  Physics Express 5, 055503,1~3. (SCI). 本人為通訊作者.
- Design, Fabrication and Reliability of Low-Cost Flip-Chip-On-Board Package for Commercial Applications up to 50 GHz.
  Li-Han Hsu, Chee-Way Oh, Wei-Cheng Wu, Edward Yi Chang, Herbert Zirath, Chin-Te Wang, Szu-Ping Tsai, Wee-Chin Lim, and Yueh-Chin Lin (2012, Mar). Design, Fabrication and Reliability of Low-Cost Flip-Chip-On-Board Package for Commercial Applications up to 50 GHz. IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 2, NO. 3,402~409. (SCI). 本人為通訊作者.
- Effect of Post Deposition Annealing Temperatures on Electrical Characteristics of Molecular Beam Deposited HfO2 on n-InAs/InGaAs MOS Capacitors.
  Hai-Dang Trinh, Yueh-Chin Lin, Chia-Hua Chang, K. Kakushima, H. Iwai, T. Kawanago, Yuen-Yee Wong, Guan-Ning Huang, Mantu K. Hudait, and Edward Yi Chang (2012, Jan). Effect of Post Deposition Annealing Temperatures on Electrical Characteristics of Molecular Beam Deposited HfO2 on n-InAs/InGaAs MOS Capacitors. Applied Physics Express 5, 021104,1~3. (SCI). 本人為通訊作
  者.
- Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition.
  Binh-Tinh Tran, Edward-Yi Chang, Kung-Liang Lin, Yuen-Yee Wong, Kartika Chandra Sahoo, Hsiao-Yu Lin, Man-Chi Huang, Hong-Quan Nguyen, Ching-Ting Lee, Hai-Dang Trinh (2011, Oct). Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition. Applied Physics Express 4, 115501 1~3. (SCI). MOST 98-2923-E-009-002-MY3. 本人為
  通訊作者
- V-Band Flip-Chip Assembled Gain Block Using In0:6Ga0:4As Metamorphic High-Electron-Mobility Transistor Technology.
  Che-Yang Chiang, Heng-Tung Hsu, Chin-Te Wang, Chien-I Kuo, Heng-Shou Hsu, and Edward Yi Chang (2011, Oct). V-Band Flip-Chip Assembled Gain Block Using In0:6Ga0:4As Metamorphic High-Electron-Mobility Transistor Technology. Applied Physics Express 4, 104105,1~3. (SCI). 本人為通訊作者.
- Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy.
  H. W. Yu, E. Y. Chang, Y. Yamamoto, B. Tillack, W. C. Wang, C. I. Kuo, Y. Y. Wong, H. Q. Nguyen (2011, Oct). Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy. Applied Physics Letters, 171908 1~3. (SCI). NSC 99-2221-E-009-170-MY3. 本人為通訊作者.
- Electrical Characterization of Al2O3/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments.
  Trinh, H. D. Brammertz, G. Chang, E. Y. Kuo, C. I. Lu, C. Y. Lin, Y. C. Nguyen, H. Q. Wong, Y. Y. Tran, B. T. Kakushima, K. (2011, Jun). Electrical Characterization of Al2O3/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments. IEEE Electron Device Letters. (SCI). 本人為通訊作者.
- High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate.
  Shih-Hsuan Tang, Edward Yi Chang *, Mantu Hudait, Jer-Shen Maa, Chee-Wee Liu, Guang-Li Luo, Hai-Dang Trinh, and Yung-Hsua (2011, Apr). High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate. Applied Physics Letters, Vol. 98, Issue 16. (SCI). 本人為通訊作者.
- Shape Effect of Silicon Nitride Sub-wavelength Structure on Reflectance for Silicon Solar Cells.
  Edward Yi Chang (2010, Sep). Shape Effect of Silicon Nitride Sub-wavelength Structure on Reflectance for Silicon Solar Cells. IEEE Transaction on Electron Device. (SCI). 本人為通訊作者.
- Flip-Chip Based Multi-Chip Module for Low Phase-Noise V-Band Frequency Generation.
  Edward Yi Chang (2010, Aug). Flip-Chip Based Multi-Chip Module for Low Phase-Noise V-Band Frequency Generation. IEEE Transaction on Microwave Theory and Techniques. (SCI). 本人為通訊作者.
- RF Performance Improvement of Metamorphic High Electron Mobility Transistor Using (InxGa1-xAs)m/(InAs)n Superlattice-channel Structure for Millimeter Wave Applications.
  Edward Yi Chang (2010, Jul). RF Performance Improvement of Metamorphic High Electron Mobility Transistor Using (InxGa1-xAs)m/(InAs)n Superlattice-channel Structure for Millimeter Wave Applications. IEEE Electron Device Letter, Volume : 31 , Issue:7 On page(s): 677 - 679 . (SCI). 本人為通訊作者.
- Design of Flip-Chip Interconnect Using Epoxy-Based Underfilll Up to V-Band Frequencies with Excellent Reliability.
  Edward Yi Chang (2010, Jul). Design of Flip-Chip Interconnect Using Epoxy-Based Underfilll Up to V-Band Frequencies with Excellent Reliability. IEEE Transaction on Microwave Theory and Techniques, Volume : 58, Issue:8 . (SCI). 本人為通訊作者.
- he influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor.
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- Design and Fabrication of 0/1-Level RF-Via Interconnect for RF-MEMS Packaging Applications.
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- 30-GHz Low-Noise Performance of 100-nm- Gate-Recessed n-GaN/AlGaN/GaN HEMTs. IEEE Electron Device Letters.
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- GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications
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- Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
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- Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors with Different Annealing
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- Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperature
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- InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
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- RF and Logic Performance Improvement of In0.7Ga0.3As /InAs/In0.7Ga0.3As Composite Channel HEMT Using Gate Sinking Technology
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- Investigation of Impact Ionization in InAs-Channel HEMT for Speed and Low Power Applications
  C. Y. Chang, H. T. Hsu, E. Y. Chang, C. I. Kuo, M. Radosavljevic, Y. Miyamoto, and G. W. Huang, “Investigation of Impact Ionization in InAs-Channel HEMT for Speed and Low Power Applications” IEEE Electron Device Lett., vol. 28, no. 10, pp.856 - 858,Oct. 2007.
- Growth of very high mobility AlGaSb/InAs High-Electron-Mobility transistor structure on Si substrate for high-speed electronic applications
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- Backside copper metallization of GaAs MESFET’s using TaN as the diffusion barrier
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- 5mm high-power-density dual-delta-doped power HEMT’s for 3 V L-band applications
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