- 吳文偉
- 韋光華
- 陳三元
- 張立
- 張翼
- 吳耀銓
- 林宏洲
- 陳智
- 柯富祥
- 吳樸偉
- 徐雍鎣
- 陳軍華
- 劉典謨
- 曾院介
- 林欣杰
- 黃爾文
- 鄒年棣
- 王誠佑
- 黃彥霖
- 鍾采甫
- 林御專
- 朱英豪
- 曽根 正人
- 朝春光
- 林健正
- 呂志鵬
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A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding
Bo-Wen Lin, Nian-Jheng Wu, Yew Chung Sermon Wu, and S. C. Hsu "A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding," JOURNAL OF DISPLAY TECHNOLOGY, 9 (2013), No5, PP371.
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Using BCl3-based Plasmas to Modify Wet-etching Pattern Sapphire Substrate for Improving the Growth of GaN-based LEDs
Bo-Wen Lin, Chen-Yi Niu, Cheng-Yu Hsieh, Bau-Ming Wang, Wen-Ching Hsu, Ray-Ming Lin, and YewChung Sermon Wu, "Using BCl3-based Plasmas to Modify Wet-etching Pattern Sapphire Substrate for Improving the Growth of GaN-based LEDs," IEEE Photonics Tech. Lett. 4(2013) PP371-3.
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Evolution of Bottom c-Plane onWet-Etched Patterned Sapphire Substrate
Chien-Chih Chen, Feng Ching Hsiao, Bo-Wen Lin, Wen-Ching Hsu, and YewChung Sermon Wu " Evolution of Bottom c-Plane onWet-Etched Patterned Sapphire Substrate," ECS Journal of Solid State Science and Technology, 2 (2013), No9, R169-R171.?
JULY -
The formation of smooth facets on wet-etched patterned sapphire substrate
Yu-Chung Chen, Bo-Wen Lin, Wen-Ching Hsu and YewChung Sermon Wu "The formation of smooth facets on wet-etched patterned sapphire substrate," ECS Journal of Solid State Science and Technology, 3 (2014), No9, R5-R8.
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Morphologies and Plane Indices of Pyramid Patterns on Wet-etched Patterned Sapphire Substrate
Yu-Chung Chen, Bo-Wen Lin, Wen-Ching Hsu and YewChung Sermon Wu "Morphologies and Plane Indices of Pyramid Patterns on Wet-etched Patterned Sapphire Substrate," ECS Journal of Solid State Science and Technology, 118 (2014), No9, 72-75.
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Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire
Ji-Hao Cheng, YewChung Sermon Wu, Wei-Chih Liao and Bo-Wen Lin," Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire," Appl. Phys. Lett. 96(2010) PP051109.